The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2002
Filed:
Apr. 12, 1999
Applicant:
Inventors:
Toshikazu Mizukoshi, Tokyo, JP;
Ikuo Kurachi, Tokyo, JP;
Assignee:
OKI Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A Si N film and a side wall are provided on an electrode to obtain a Cs capacitor capable of enlarging an area of a memory cell contact of a DRAM, and a hole if formed penetrating an inter-layer film by a selective etching process. The Si N film and the side wall are left without being etched, and an area of the hole through which a substrate is exposed, is smaller than an upper portion area of the hole.
Mizukoshi, Toshikazu. (2002). Semiconductor device and manufacturing method thereof (U.S. Patent No. 6383866). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6383866
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile