The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Aug. 31, 2007
Toshikazu Mizukoshi, Miyagi, JP;
Toshikazu Mizukoshi, Miyagi, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor substrate, a gate electrode, first and second impurity diffusion regionsand, first and second variable-resistance regions, first and second main electrodes, first and second charge storing unitsare included therein. The first and second charge storing units are configured by stacking layers in order from bottom oxide filmsto charge storing nitride filmsto top oxide films, 43, respectively. At the same time, the distance between the first main electrode and the charge storing nitride film formed in the first charge storing unit is constant, and the distance between the second main electrode and the charge storing nitride film formed in the second charge storing unit is constant.
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