Ibaraki, Japan

Toshikazu Hanawa

USPTO Granted Patents = 10 

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2023

Loading Chart...
10 patents (USPTO):

Title: Innovations of Toshikazu Hanawa

Introduction

Toshikazu Hanawa is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on improving the manufacturing processes and materials used in semiconductor devices.

Latest Patents

Hanawa's latest patents include a semiconductor device and a method of manufacturing the same. The semiconductor device features an interlayer insulating film with via holes. A sidewall conductive layer is arranged along the sidewall surface of one via hole and contains materials such as tungsten, titanium, titanium nitride, tantalum, and molybdenum. Additionally, a second metal wiring layer is embedded in one via hole and contains aluminum, while a plug layer is embedded in the other via hole with similar materials. His method of manufacturing a semiconductor device aims to enhance the adhesion between a plating film and a wiring layer. This method includes several steps, such as forming a wiring layer covered with an oxide film and growing a plating film on the exposed wiring layer.

Career Highlights

Toshikazu Hanawa is currently employed at Renesas Electronics Corporation, where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in the industry.

Collaborations

Hanawa has collaborated with notable coworkers, including Kazuhide Fukaya and Kotaro Horikoshi. Their combined efforts have further advanced the field of semiconductor devices.

Conclusion

Toshikazu Hanawa's work in semiconductor technology exemplifies innovation and dedication. His patents and collaborations contribute significantly to advancements in the industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…