The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Jun. 22, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 21/30 (2006.01); G01R 31/00 (2006.01); H01L 21/66 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); G01N 21/73 (2006.01); G01N 21/84 (2006.01); G01N 21/68 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); G01N 21/68 (2013.01); G01N 21/73 (2013.01); G01N 21/84 (2013.01); H01J 37/32963 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); G01N 2021/8411 (2013.01); G01N 2021/8427 (2013.01); G01N 2201/1247 (2013.01); H01J 2237/334 (2013.01);
Abstract
A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.