The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2017

Filed:

Feb. 25, 2016
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Toshikazu Hanawa, Ibaraki, JP;

Kazuhide Fukaya, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76826 (2013.01); H01L 21/0234 (2013.01); H01L 21/02164 (2013.01); H01L 21/02282 (2013.01); H01L 21/02315 (2013.01);
Abstract

To provide a semiconductor device having improved reliability. After formation of a first insulating film for an interlayer insulating film by spin coating, the surface of the first insulating film is subjected to a hydrophilicity improving treatment. A second insulating film for the interlayer insulating film is then formed on the first insulating film by spin coating. The interlayer insulating film is comprised of a stacked insulating film including the first insulating film and the second insulating film thereon. The interlayer insulating film therefore can have improved surface flatness.


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