The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Jan. 25, 2016
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventors:
Kotaro Horikoshi, Ibaraki, JP;
Toshikazu Hanawa, Ibaraki, JP;
Masatoshi Akaishi, Ibaraki, JP;
Yuji Kikuchi, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76825 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01);
Abstract
In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CFgas and CHFgas as its components.