Ibaraki, Japan

Masatoshi Akaishi

This inventor holds 3 USPTO granted patents. Top assignee: Renesas Electronics Corporation. Active years: 2017-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masatoshi Akaishi. Retrieved from https://idiyas.com/inventor/masatoshi-akaishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2017-2019

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3 patents (USPTO):Explore Patents

Title: Masatoshi Akaishi: Innovator in Semiconductor Manufacturing

Introduction

Masatoshi Akaishi is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 3 patents. His work focuses on enhancing the reliability of semiconductor devices while minimizing manufacturing costs.

Latest Patents

Akaishi's latest patents include a manufacturing method of semiconductor devices. This innovative method involves performing dry etching for an insulating film using a mixed gas that contains at least CF gas and CHF gas as its components. This approach aims to provide semiconductor devices with high reliability while keeping production costs low.

Career Highlights

Masatoshi Akaishi is currently employed at Renesas Electronics Corporation, a leading company in the semiconductor industry. His expertise and innovative methods have contributed to the advancement of semiconductor technology, making a lasting impact on the field.

Collaborations

Akaishi has collaborated with notable coworkers, including Kotaro Horikoshi and Toshikazu Hanawa. Their combined efforts in research and development have furthered the progress of semiconductor manufacturing techniques.

Conclusion

Masatoshi Akaishi's contributions to semiconductor manufacturing exemplify the importance of innovation in technology. His patents and collaborative efforts continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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