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Nishinomiya, Japan

Toshihiro Hayami

USPTO Granted Patents = 8

Average Co-Inventor Count = 4.2

ph-index = 6

Forward Citations = 110(Granted Patents)

Location History:

Nishinomiya, JP (1998 - 2000)
Osaka, JP (1997 - 2003)

Company Filing History:

Sumitomo Metal Industries, Inc.

Sumimoto Metal Indsutries, Ltd.

Years Active: 1997-2003

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8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6669810 - Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof (2003-12-30),

2. 6149761 - Etching apparatus and etching system using the method thereof (2000-11-21),

3. 6092486 - Plasma processing apparatus and plasma processing method (2000-07-25),

4. 6091045 - Plasma processing apparatus utilizing a microwave window having a (2000-07-18),

5. 5951887 - Plasma processing apparatus and plasma processing method (1999-09-14),

6. 5885472 - Method for detecting etching endpoint, and etching apparatus and etching (1999-03-23),

7. 5705019 - Plasma processing apparatus (1998-01-06),

8. 5626714 - Method for detecting etching endpoint and etching apparatus and etching (1997-05-06),

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