The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 1998
Filed:
Apr. 23, 1996
Minoru Yamada, Ikoma-gun, JP;
Toshihiro Hayami, Nishinomiya, JP;
Sumitomo Metal Industries, Ltd., Osaka, JP;
Abstract
A plasma processing apparatus comprises a reaction chamber, an upper electrode, a lower electrode which confronts the upper electrode and also functions as a sample stage, means of supplying RF power between the upper electrode and lower electrode such that the RF power is supplied to one of the upper and lower electrodes, with another electrode and the reaction chamber being grounded, and RF impedance matching means, wherein the capacitance between the grounded electrode and the reaction chamber is 125 pF or less. The apparatus is capable of stabilizing the plasma generation and alleviating the occurrence of sudden deterioration of the repeatability of plasma processing and unequal performance of plasma processing among individual apparatus. The apparatus can be applied suitably to etching apparatus having small electrode spacing and using a chlorine compound gas or a bromine compound gas such as Cl.sub.2 or HBr.