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For the Inventor, By the Inventor

Tokyo, Japan

Toshihiko Orihara

This inventor holds 16 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignee: Hoya Corporation. Active years: 2015-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihiko Orihara. Retrieved from https://idiyas.com/inventor/toshihiko-orihara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 16(Granted Patents)


Location History:

  • Shinjuku-ku, JP (2015 - 2018)
  • Tokyo, JP (2016 - 2020)

Company Filing History:

goldMedal16 out of 2,569 
 
Hoya Corporation
 patents

Years Active: 2015-2020

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Areas of Expertise:
Mask Blank
Semiconductor Device
Multilayer Reflective Film
Transmissive Mask
Reflective Mask
EUV Lithography
Fabrication Method
Processing Device
Substrate Manufacturing
Transfer Mask
Reflective Mask Blank
16 patents (USPTO):Explore Patents
1. 10620527 - Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method (2020-04-14),
2. 10481488 - Mask blank substrate processing device, mask blank substrate processing method, mask blank substrate fabrication method, mask blank fabrication method, and transfer mask fabrication method (2019-11-19),
3. 10429728 - Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method (2019-10-01),
4. 10295900 - Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method (2019-05-21),
5. 10175394 - Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device (2019-01-08),
6. 10025176 - Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing mask blank substrate, method of manufacturing substrate with reflective film and method of manufacturing semiconductor device (2018-07-17),
7. 10001699 - Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method (2018-06-19),
8. 9897909 - Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method (2018-02-20),
9. 9798050 - Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device (2017-10-24),
10. 9581895 - Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing mask blank substrate, method of manufacturing substrate with reflective film and method of manufacturing semiconductor device (2017-02-28),
11. 9507254 - Method of manufacturing substrate with a multilayer reflective film, method of manufacturing a reflective mask blank, substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing a semiconductor device (2016-11-29),
12. 9494851 - Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method (2016-11-15),
13. 9488904 - Mask blank glass substrate, multilayer reflective film coated substrate, mask blank, mask, and methods of manufacturing the same (2016-11-08),
14. 9383637 - Substrate with multilayer reflective film, reflective mask blank for EUV lithography, method of manufacturing reflective mask for EUV lithography and method of manufacturing semiconductor device (2016-07-05),
15. 9348217 - Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method (2016-05-24),

Title: Innovations of Toshihiko Orihara: A Pioneer in Lithography

Introduction

Toshihiko Orihara is a renowned inventor based in Tokyo, Japan, celebrated for his pioneering contributions to lithography technology. With an impressive portfolio featuring 16 patents, Orihara's innovative solutions have significantly impacted semiconductor manufacturing processes.

Latest Patents

Orihara's most recent patents showcase his expertise in producing high-quality mask blank substrates essential for advanced lithography applications. These include:

1. Mask blank substrate

2. Substrate with multilayer reflection film

3. Transmissive mask blank

4. Reflective mask blank

5. Transmissive mask

6. Reflective mask

7. Semiconductor device fabrication method

His inventions focus on optimizing the mask blank substrate, ensuring high-level smoothness and low-defect quality through meticulous measurements and innovative processing methods.

Career Highlights

Currently affiliated with Hoya Corporation, Orihara has devoted his career to refining lithography technologies. His groundbreaking work in mask blank substrate development emphasizes the importance of precise relationships between bearing areas and depths, driving improvements in manufacturing efficiency and quality in the semiconductor industry.

Collaborations

Throughout his career, Orihara has worked alongside notable colleagues such as Tsutomu Shoki and Kazuhiro Hamamoto. Together, they have collaborated on various projects that advance knowledge and technology in the realm of lithography and semiconductor fabrication.

Conclusion

Toshihiko Orihara stands as a remarkable figure in the field of modern invention, with a legacy built on innovation and collaboration. His continued contributions via Hoya Corporation underline his commitment to enhancing technologies that shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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