The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Jan. 27, 2017
Hoya Corporation, Tokyo, JP;
Kazuhiro Hamamoto, Tokyo, JP;
Toshihiko Orihara, Tokyo, JP;
Tsutomu Shoki, Tokyo, JP;
Junichi Horikawa, Tokyo, JP;
HOYA CORPORATION, Tokyo, JP;
Abstract
An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10μmto 1 μm, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×10nm, and the power spectral density at a spatial frequency of not less than 1 μm, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm.