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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10001699 B1

PDFFull Text
Date of Patent:
Jun. 19, 2018

Filed:

Sep. 26, 2016

Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method

Applicant:

Hoya Corporation, Shinjuku-ku, Tokyo, JP;

Inventors:

Toshihiko Orihara, Shinjuku-ku, JP;

Kazuhiro Hamamoto, Shinjuku-ku, JP;

Hirofumi Kozakai, Shinjuku-ku, JP;

Youichi Usui, Shinjuku-ku, JP;

Tsutomu Shoki, Shinjuku-ku, JP;

Junichi Horikawa, Shinjuku-ku, JP;

Assignee:

HOYA CORPORATION, Shinjuku-ku, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Stephen Rosasco

Int. Cl.
CPC ...
G03F 1/22 (2012.01); C03C 3/06 (2006.01); G03F 1/48 (2012.01); G02B 5/08 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G03F 7/20 (2006.01); C03C 17/34 (2006.01); C03C 17/36 (2006.01); C03C 23/00 (2006.01); G03F 7/16 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G03F 1/48 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C03C 3/06 (2013.01); C03C 17/3435 (2013.01); C03C 17/3626 (2013.01); C03C 17/3636 (2013.01); C03C 17/3639 (2013.01); C03C 17/3649 (2013.01); C03C 17/3665 (2013.01); C03C 23/0075 (2013.01); G02B 5/08 (2013.01); G02B 5/0816 (2013.01); G02B 5/0891 (2013.01); G03F 1/22 (2013.01); G03F 7/16 (2013.01); G03F 7/2002 (2013.01); G03F 7/2004 (2013.01); G03F 7/70733 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); C03C 2201/42 (2013.01); C03C 2218/33 (2013.01);
Abstract

Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nmat a spatial frequency of not less than 1 μm.

Find Patent Forward Citations

Orihara, Toshihiko. (2018). Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method (U.S. Patent No. 10001699). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10001699

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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