Takasago, Japan

Toshihiko Nishimori

This inventor holds 8 USPTO granted patents and 5 published patent applications and 1 EPO patent. Top assignees: Mitsubishi Heavy Industries Limited, Canon Anelva Corporation, Mitsubishi Electric Corporation. Active years: 2003-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshihiko Nishimori. Retrieved from https://idiyas.com/inventor/toshihiko-nishimori

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 12.5

 

Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 109(Granted Patents)


Location History:

  • Yokohama, JP (2003)
  • Takasago, JP (2007 - 2012)

Company Filing History:


Years Active: 2003-2012

Loading Chart...
Loading Chart...
8 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Toshihiko Nishimori

Introduction

Toshihiko Nishimori is a prominent inventor based in Takasago, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on developing advanced materials and processes that enhance the performance and reliability of semiconductor devices.

Latest Patents

Nishimori's latest patents include innovations such as an insulating film for semiconductor devices and the processes and apparatus for producing these films. The insulating film is designed to exhibit low permittivity, low leakage current, and high mechanical strength. It also maintains its characteristics over time and offers excellent water resistance. The production process involves supplying a gas containing a raw material gas that gasifies a predetermined alkylborazine compound into a chamber. An electromagnetic wave is introduced to convert the gas into plasma, allowing for gas-phase polymerization to form the insulating film on the substrate.

Another notable patent involves a barrier metal film production apparatus and method. This innovation generates a Cl gas plasma within a chamber to etch a metal member, forming a precursor. Excited nitrogen gas reacts with the precursor to create a metal nitride film on the substrate, followed by the deposition of a metal component. This method produces a barrier metal film with excellent properties at high speed while suppressing metal diffusion.

Career Highlights

Throughout his career, Nishimori has worked with leading companies in the industry, including Mitsubishi Heavy Industries Limited and Canon Anelva Corporation. His expertise in semiconductor technology has made him a valuable asset in these organizations.

Collaborations

Nishimori has collaborated with notable colleagues such as Hitoshi Sakamoto and Naoki Yahata. Their combined efforts have contributed to advancements in semiconductor technology and innovation.

Conclusion

Toshihiko Nishimori's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced materials and processes that enhance the performance of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…