The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2007
Filed:
May. 19, 2005
Hitoshi Sakamoto, Yokohama, JP;
Naoki Yahata, Takasago, JP;
Toshihiko Nishimori, Takasago, JP;
Yoshiyuki Ooba, Yokohama, JP;
Hiroshi Tonegawa, Yokohama, JP;
Ikumasa Koshiro, Takasago, JP;
Yuzuru Ogura, Yokohama, JP;
Hitoshi Sakamoto, Yokohama, JP;
Naoki Yahata, Takasago, JP;
Toshihiko Nishimori, Takasago, JP;
Yoshiyuki Ooba, Yokohama, JP;
Hiroshi Tonegawa, Yokohama, JP;
Ikumasa Koshiro, Takasago, JP;
Yuzuru Ogura, Yokohama, JP;
Phyzchemix Corporation, Tokyo, JP;
Abstract
In a metal film production apparatus, a copper plate member is etched with a Clgas plasma within a chamber to form a precursor comprising a Cu component and a Clgas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Clgas, and the Cl* is supplied into the chamber to withdraw a Clgas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.