The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Jan. 26, 2010
Hitoshi Sakamoto, Yokohama, JP;
Naoki Yahata, Takasago, JP;
Ryuichi Matsuda, Takasago, JP;
Yoshiyuki Ooba, Yokohama, JP;
Toshihiko Nishimori, Takasago, JP;
Hitoshi Sakamoto, Yokohama, JP;
Naoki Yahata, Takasago, JP;
Ryuichi Matsuda, Takasago, JP;
Yoshiyuki Ooba, Yokohama, JP;
Toshihiko Nishimori, Takasago, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
A Clgas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Clgas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.