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For the Inventor, By the Inventor

Tokyo, Japan

Toshiaki Nishibe

This inventor holds 8 USPTO granted patents. Top assignees: Nec Corporation, Nec Compound Semiconductor Devices, Ltd.. Active years: 2000-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiaki Nishibe. Retrieved from https://idiyas.com/inventor/toshiaki-nishibe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8

% Patents Active = 87.5

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 119(Granted Patents)


Company Filing History:

goldMedal7 out of 36,676 
 
Nec Corporation
 patents
silverMedal1 out of 60 
 
Nec Compound Semiconductor Devices, Ltd.
 patents

Years Active: 2000-2003

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8 patents (USPTO):Explore Patents
1. 6542045 - High-frequency variable attenuator having a controllable reference voltage (2003-04-01),
2. 6319753 - Semiconductor device having lead terminals bent in J-shape (2001-11-20),
3. 6242797 - Semiconductor device having pellet mounted on radiating plate thereof (2001-06-05),
4. 6177720 - Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame (2001-01-23),
5. 6175150 - Plastic-encapsulated semiconductor device and fabrication method thereof (2001-01-16),
6. 6165818 - Method of manufacturing a semiconductor device with a pair of radiating (2000-12-26),
7. 6150715 - Semiconductor device with radiation plate for high radiation character (2000-11-21),
8. 6104086 - Semiconductor device having lead terminals bent in J-shape (2000-08-15),

Title: Toshiaki Nishibe: Innovator in High-Frequency Technology

Introduction

Toshiaki Nishibe is a prominent inventor based in Tokyo, Japan. He holds a total of 8 patents that showcase his contributions to the field of high-frequency technology. His innovative designs have significantly impacted the semiconductor industry.

Latest Patents

One of his latest patents is a high-frequency variable attenuator that features a controllable reference voltage. This device variably attenuates an input high-frequency signal in response to a control voltage, producing an output high-frequency signal. The reference voltage generating circuit plays a crucial role in this process by generating a controllable reference voltage. Another notable patent is for a semiconductor device with lead terminals bent in a J-shape. This design includes a radiating plate with a recess that enhances heat radiating properties while preventing short-circuiting between the radiating plate and the lead terminals.

Career Highlights

Toshiaki Nishibe has worked with notable companies such as NEC Corporation and NEC Compound Semiconductor Devices, Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Some of his coworkers include Seiji Ichikawa and Takeshi Umemoto. Their collaboration has contributed to the advancement of technology in their respective fields.

Conclusion

Toshiaki Nishibe's work in high-frequency technology and semiconductor devices has made a significant impact on the industry. His innovative patents reflect his expertise and dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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