Shanghai, China

Tongbo Zhang

This inventor holds 2 USPTO granted patents and 3 EPO patents. Top assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation. Active years: 2025-2026.


% Patents Active = 100.0

 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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2 patents (USPTO):Explore Patents

Title: Innovations of Tongbo Zhang in Semiconductor Technology

Introduction

Tongbo Zhang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the performance of insulated gate bipolar transistors (IGBTs) through innovative semiconductor structures.

Latest Patents

Tongbo Zhang's latest patents include a semiconductor structure and a method of forming the same. This semiconductor structure features a substrate doped with a first ion, a deep trench structure, and a barrier doped region. The design aims to enhance the performance of IGBT devices. His second patent involves an IGBT device and a method for manufacturing it, which includes a super junction structure with alternating N-type and P-type pillars. This innovative design is intended to optimize the efficiency of the device.

Career Highlights

Throughout his career, Tongbo Zhang has worked with notable companies such as Shanghai Huahong Grace Semiconductor Manufacturing Corporation and Xinxing Ductile Iron Pipes Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor manufacturing and innovation.

Collaborations

Tongbo Zhang has collaborated with talented individuals in his field, including Jia Pan and Yiping Yao. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Tongbo Zhang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in IGBT devices and semiconductor structures.

Profile summary based on public USPTO records.
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