Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Tongbo Zhang

Peng Sun

Jia Pan

Junjun Xing

Jiye Yang

Xuan Huang

Chong Chen

Yiping Yao

An IGBT device and a method for manufacturing it, the device includes a super junction structure that has several N-type pillars and P-type pillars arranged alternately; a cell unit that is located in an N-type epitaxial layer, and the N-type epitaxial layer is located above the N-type substrate; each cell unit includes a trench gate, a P-type body region, and a source region; an N-type carrier injection layer, the N-type carrier injection layer is located in the N-type epitaxial layer, and the N-type carrier injection layer is spaced apart from the N-type substrate by the N-type epitaxial layer; the bottom of the P-type body region is located in the N-type carrier injection layer; and a collector region that is located at the bottom of the N-type substrate.

IGBT device and method of making the same

Growing community of inventors

Shanghai, China

Tongbo Zhang