Tong-Min Weng

Title: Innovations of Tong-Min Weng in Semiconductor Technology

Introduction

Tong-Min Weng is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on methods for forming semiconductor devices, which are crucial for the advancement of electronic components.

Latest Patents

Among his latest patents, Weng has developed a method for forming a semiconductor device that includes at least one gate structure. This gate structure comprises a gate electrode over a substrate, with the gate electrode made from a conductive material. Additionally, a first dielectric layer is disposed along one or more side walls of the gate structure. This dielectric layer is composed of fluorine-doped silicon oxycarbonitride or fluorine-doped silicon oxycarbide. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Weng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative methods have contributed to the company's reputation for excellence in semiconductor manufacturing.

Collaborations

Weng has collaborated with notable colleagues, including Tsung-Han Wu and Chun-Yi Huang. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Tong-Min Weng's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the advancement of electronic devices and systems.