The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Aug. 30, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Tong-Min Weng, Hsin-Chu, TW;
Tsung-Han Wu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 21/3115 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823864 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02131 (2013.01); H01L 21/02321 (2013.01); H01L 21/28123 (2013.01); H01L 21/31155 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/4983 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method for forming a semiconductor device includes steps of: forming at least one gate structure comprising a gate electrode over a substrate, and forming a first dielectric layer of a first dielectric material along a side wall of the at least one gate structure. The first dielectric layer of the first dielectric material includes fluorine doped silicon oxycarbonitride with a doping concentration of fluorine. The dielectric constant of the first dielectric layer is adjusted through the doping concentration of fluorine.