The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Feb. 23, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tong-Min Weng, Hsin-Chu, TW;
Tsung-Han Wu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/02126 (2013.01); H01L 21/02131 (2013.01); H01L 21/0217 (2013.01); H01L 21/022 (2013.01); H01L 21/02321 (2013.01); H01L 21/28123 (2013.01); H01L 21/31155 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 64/671 (2025.01); H10D 84/0184 (2025.01); H10D 84/0193 (2025.01); H10D 84/853 (2025.01);
Abstract
A semiconductor device includes: at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a conductive material; and a first dielectric layer disposed along one or more side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride or fluorine doped silicon oxycarbide.