Yokkaichi, Japan

Tomoyuki Obu

USPTO Granted Patents = 9 

Average Co-Inventor Count = 3.5

ph-index = 6

Forward Citations = 138(Granted Patents)


Location History:

  • Nagoya, JP (2018)
  • Yokkaichi, JP (2016 - 2022)

Company Filing History:


Years Active: 2016-2022

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9 patents (USPTO):

Title: Tomoyuki Obu: Innovator in Three-Dimensional Memory Devices

Introduction

Tomoyuki Obu is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory devices, holding a total of 9 patents. His innovative work focuses on enhancing the performance and efficiency of three-dimensional memory technologies.

Latest Patents

Obu's latest patents include groundbreaking advancements in three-dimensional memory devices. One notable patent is for a "Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same." This invention features an alternating stack of insulating layers and electrically conductive layers, which are crucial for improving memory device performance. Another significant patent is for "Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same." This patent outlines a method for forming memory openings and layers that enhance the functionality of memory devices.

Career Highlights

Tomoyuki Obu is currently employed at Sandisk Technologies Inc., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of modern computing.

Collaborations

Obu has collaborated with notable colleagues, including Tatsuya Hinoue and Tomohiro Uno. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Tomoyuki Obu's contributions to the field of three-dimensional memory devices highlight his role as a leading inventor. His patents reflect a commitment to advancing technology and improving memory device performance.

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