This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Tingze Wang - Innovator in Memory Technology
Introduction
Tingze Wang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly through his innovative patent. His work focuses on enhancing the efficiency and functionality of memory devices.
Latest Patents
Tingze Wang holds a patent for a memory device, memory system, and operation method for applying read voltages to a word line. The patent describes a memory device that includes a peripheral circuit and a memory cell array. The memory cell array consists of groups of memory cells, with each group coupled to a corresponding word line. The peripheral circuit is designed to apply a first read voltage to a selected word line for a specific duration to perform a read operation on a first page of memory cells. It also applies a second read voltage to the same word line for a different duration to read a second page of memory cells. The relationship between the durations and the voltage differences is crucial for optimizing the read operations.
Career Highlights
Tingze Wang is currently employed at Yangtze Memory Technologies, Ltd. His role at the company allows him to work on cutting-edge memory technologies that have the potential to revolutionize data storage and retrieval processes.
Collaborations
He collaborates with talented coworkers, including Yuanyuan Min and Ying Huang, who contribute to the innovative environment at Yangtze Memory Technologies, Ltd. Their teamwork fosters creativity and drives advancements in memory technology.
Conclusion
Tingze Wang is a key figure in the development of memory devices, with a focus on improving their operational methods. His contributions are paving the way for future innovations in the field of memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile