Hsin-Chu, Taiwan

Tings Wang


Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Hsin-Chu Hsien, TW (2000 - 2002)
  • Hsinchu, TW (1998 - 2007)

Company Filing History:


Years Active: 1998-2007

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5 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Tings Wang

Introduction

Tings Wang is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 5 patents. His work focuses on enhancing the performance and quality of non-volatile memory cells and related technologies.

Latest Patents

One of Tings Wang's latest patents is titled "Structure of a non-volatile memory cell and method of forming the same." This invention provides a flash memory cell that includes a substrate with a source and a drain, a bit line contact above the drain, a control gate, and a floating gate. The design aims to improve the efficiency and reliability of flash memory technology. Another significant patent is the "Monitor method for quality of metal ARC (antireflection coating) layer." This invention introduces a fast and accurate method for monitoring the quality of metal ARC layers by utilizing a silicon wafer immersed in a chemical solution. The method allows for the detection of defects in the metal ARC layer, ensuring high-quality production standards.

Career Highlights

Throughout his career, Tings Wang has worked with prominent companies in the technology sector, including Mosel Vitelic Corporation and Promos Technologies, Inc. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Tings Wang has collaborated with esteemed colleagues such as Chou-Shin Jou and Chung-Shih Tsai. Their combined efforts have further advanced the field of memory technology and innovation.

Conclusion

Tings Wang's contributions to the field of memory technology are noteworthy, with several patents that enhance the performance and quality of memory cells. His work continues to influence advancements in this critical area of technology.

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