The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Mar. 11, 1999
Tsai-Sen Lin, Hsin-Chu, TW;
Bor-Shiun Wu, Hsin-Chu, TW;
Chou-Shin Jou, Hsin-Chu, TW;
Tings Wang, Hsin-Chu, TW;
Mosel Vitelic Incorporated, Hsin-Chu, TW;
Abstract
The present invention relates to a monitor method for quality of metal Antireflection Coating (ARC) layer and, more particularly, to a fast and accurate monitor method for quality of metal ARC layer. By using of immersing a silicon wafer comprising an ARC layer into an acidic (such as a developer) or an alkalescent solution for about 200-300 seconds, according to the present invention, at weak points of the metal ARC layer there occur voids (defects) due to a Galvanic cell effect enhanced by these chemical solutions and then how many defects can be counted by a wafer defect inspector such as a KLA instrument so that quality of the metal ARC layer can be monitored by this defect number. Besides, Since the silicon wafer used as a sample for the wafer defect inspector simply comes from a production line, i.e. a developing process, rather than from other additional processing, said method allows for fast and accurately monitoring quality of the metal ARC layers.