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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Tian H Lim

This inventor holds 8 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 2002-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tian H Lim. Retrieved from https://idiyas.com/inventor/tian-h-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8

% Patents Active = 62.5

Average Co-Inventor Count = 3.8

ph-index = 6

Forward Citations = 1,750(Granted Patents)


Company Filing History:

goldMedal8 out of 14,502 
 
Applied Materials, Inc.
 patents

Years Active: 2002-2012

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8 patents (USPTO):Explore Patents
1. 8143174 - Post-deposition treatment to enhance properties of Si-O-C low K films (2012-03-27),
2. 7326657 - Post-deposition treatment to enhance properties of Si-O-C low k films (2008-02-05),
3. 6899763 - Lid cooling mechanism and method for optimized deposition of low-K dielectric using TR methylsilane-ozone based processes (2005-05-31),
4. 6858923 - Post-deposition treatment to enhance properties of Si-O-C low films (2005-02-22),
5. 6635575 - Methods and apparatus to enhance properties of Si-O-C low K films (2003-10-21),
6. 6602806 - Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film (2003-08-05),
7. 6528116 - Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes (2003-03-04),
8. 6486061 - Post-deposition treatment to enhance properties of Si-O-C low K films (2002-11-26),

Title: Innovations of Tian H Lim

Introduction

Tian H Lim is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of materials science, particularly in the development of dielectric films. With a total of 8 patents to his name, Lim's work has had a substantial impact on the industry.

Latest Patents

One of his latest patents is titled "Post-deposition treatment to enhance properties of Si-O-C low K films." This method provides a dielectric film with enhanced adhesion and stability. The process involves a post-deposition treatment that densifies the film in a reducing atmosphere, improving stability when the film is cured ex-situ. The densification typically occurs in a reducing environment while heating the substrate. This treatment is especially suitable for silicon-oxygen-carbon low dielectric constant films deposited at low temperatures.

Career Highlights

Tian H Lim is currently employed at Applied Materials, Inc., where he continues to innovate and develop new technologies. His expertise in dielectric films has positioned him as a key player in the field.

Collaborations

Lim has collaborated with notable colleagues, including Li-Qun Xia and Frederic Gaillard, further enhancing the scope and impact of his work.

Conclusion

Tian H Lim's contributions to the field of materials science, particularly through his innovative patents, demonstrate his commitment to advancing technology. His work continues to influence the development of dielectric films, showcasing the importance of innovation in this sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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