The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2012

Filed:

Jan. 11, 2008
Applicants:

Li-qun Xia, San Jose, CA (US);

Frederic Gaillard, Voiron, FR;

Ellie Yieh, San Jose, CA (US);

Tian H. Lim, Santa Clara, CA (US);

Inventors:

Li-Qun Xia, San Jose, CA (US);

Frederic Gaillard, Voiron, FR;

Ellie Yieh, San Jose, CA (US);

Tian H. Lim, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

Published as:

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