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For the Inventor, By the Inventor

Voiron, France

Frederic Gaillard

USPTO Granted Patents = 33 


Average Co-Inventor Count = 3.7

ph-index = 16

Forward Citations = 3,599(Granted Patents)


Location History:

  • Meylan, FR (2002 - 2004)
  • Rue des Tallifardierest, FR (2003 - 2006)
  • Voiron, FR (2001 - 2018)

Company Filing History:

goldMedal23 out of 13,684 
 
Applied Materials, Inc.
 patents
silverMedal7 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
bronzeMedal2 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
4. 1 out of 5,113 
 
Nxp B.v.
 patents
5. 1 out of 1,156 
 
France Telecom
 patents
6. 1 out of 757 
 
Stmicroelectronics (crolles 2) Sas
 patents
where one patent can have more than one assignee

Years Active: 2001-2018

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33 patents (USPTO):
1. 10050245 - Electrochemical battery module having improved resistance in moist environments and method for producing at least one such module (2018-08-14),
2. 9966879 - Thermal energy harvesting optimization with bistable elements and collaborative behavior (2018-05-08),
3. 8701702 - Fluid delivery device including a thermoelectric module (2014-04-22),
4. 8143174 - Post-deposition treatment to enhance properties of Si-O-C low K films (2012-03-27),
5. 8097949 - Control of localized air gap formation in an interconnect stack (2012-01-17),
6. 7868243 - Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter (2011-01-11),
7. 7829225 - Nanostructured electrode for a microbattery (2010-11-09),
8. 7807279 - Integrated microcomponent combining energy recovery and storage functions (2010-10-05),
9. 7740989 - Micro fuel cell with an electrolytic membrane reinforced by an anchoring element and method for production of a micro fuel cell (2010-06-22),
10. 7695531 - Method for producing a lithium microbattery (2010-04-13),
11. 7326657 - Post-deposition treatment to enhance properties of Si-O-C low k films (2008-02-05),
12. 7074708 - Method of decreasing the k value in sioc layer deposited by chemical vapor deposition (2006-07-11),
13. 6897163 - Method for depositing a low dielectric constant film (2005-05-24),
14. 6875558 - Integration scheme using self-planarized dielectric layer for shallow trench isolation (STI) (2005-04-05),
15. 6858923 - Post-deposition treatment to enhance properties of Si-O-C low films (2005-02-22),

Title: Inventor Frederic Gaillard: Revolutionizing Technology in Voiron, FR

Introduction: Frederic Gaillard is a visionary inventor based in Voiron, France, known for his groundbreaking contributions to the field of technology.

Latest Patents: Frederic Gaillard holds several patents in the areas of artificial intelligence, renewable energy, and sustainable transportation, showcasing his versatility and innovative spirit.

Career Highlights: With a career spanning over two decades, Frederic Gaillard has worked with leading tech companies to develop cutting-edge solutions that have had a significant impact on various industries.

Collaborations: Throughout his career, Frederic Gaillard has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and excellence in all his projects.

Conclusion: Frederic Gaillard's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology in Voiron and beyond.

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