The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jul. 13, 2007
Marc Plissonnier, Eybens, FR;
Frederic Gaillard, Voiron, FR;
Raphael Salot, Lans en Vercors, FR;
Jean-antoine Gruss, Seyssinet-Pariset, FR;
Marc Plissonnier, Eybens, FR;
Frederic Gaillard, Voiron, FR;
Raphael Salot, Lans en Vercors, FR;
Jean-Antoine Gruss, Seyssinet-Pariset, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.