Applied Materials, Inc.

Commissariat a L'energie Atomique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Nxp B.v.

France Telecom

Stmicroelectronics (Crolles 2) Sas

Societe Bic

Commisariat À L'énergie Atomique

Frederic Gaillard

Ellie Y Yieh

Li-Qun Xia

Tian-Hoe Lim

Tian H Lim

Raphael Salot

Fabrice Geiger

Shin-Puu Jeng

Marc Plissonnier

Paul E Fisher

Srinivas D Nemani

Yung-Cheng Lu

Paul H Adams

Wai-Fan Yau

Kuowei Liu

Margaret Gotuaco

Jean-Yves Laurent

Emmanuelle Rouviere

Shankar Venkataraman

David Wingto Cheung

Chi-I Lang

Philippe Coronel

Thomas Skotnicki

Farhad K Moghadam

Stephane Monfray

Daniel Chatroux

Alain Rosenzweig

Sebastien Carcouet

Steve Martin

Philippe Pantigny

Guillaume Savelli

Patrick Schiavone

Jen Shu

Jean-Antoine Gruss

Laurent Gosset

Nathalie Giacometti

Jean-Noel Carminati

Karine Lambert

Stephanie Roche

Jean Raymond Jacques Marie Pontcharra

A module for an electrochemical battery including plural accumulators electrically connected together by connection elements, a mechanism for electrical connection of the module with an exterior and a continuous envelope made from a dielectric polymer material that covers exterior surfaces of the accumulators, and connection elements that do not cover the mechanism for electrical connection of the module with the exterior. The continuous envelope is made by soaking to ensure coating of the accumulators and of the one or more connecting elements. The plural accumulators are distributed into plural layers, arranged in relation to each other so that one or more passages are made between the accumulators, wherein the continuous envelope covers a surface of the accumulator or accumulators delimitating the passages between the accumulators.

Electrochemical battery module having improved resistance in moist environments and method for producing at least one such module

A system includes a hot source, a cold source, and a device thermally coupled between the hot source and the cold source. The device includes a thermal-mechanical transducer and a mechanical-electrical transducer. The thermal-mechanical transducer includes a band of bimetallic strips linked mechanically together by their longitudinal ends. The band partially suspended over a portion of a substrate. Each bimetallic strip has a first stable state having a first curvature and a second stable state having a second curvature opposite the first curvature, and adjacent bimetallic strips have opposite curvature.

Thermal energy harvesting optimization with bistable elements and collaborative behavior

The fluid distribution device includes a first cavity at a first pressure and a second cavity at a second pressure lower than the first pressure. A partition separates the first cavity from the second cavity and a restricting valve is arranged between the first and second cavities. The partition includes a thermoelectric module having a hot side in thermal contact with the first cavity and a cold side in thermal contact with the second cavity.

Fluid delivery device including a thermoelectric module

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

Post-deposition treatment to enhance properties of Si-O-C low K films

The present invention relates to a method for fabricating an interconnect stack of an integrated-circuit device. Air gaps are fabricated in the interconnect stack on one or more interconnect levels. The method comprises forming local etch vias () between a lower etch-barrier layer () and an upper etch-barrier layer () on top of an upper-intermediate interconnect level (). Lateral inhomogeneities of the dielectric constant on the upper-intermediate interconnect level are removed in comparison with prior-art devices. For in the finished interconnect stack local variations in the dielectric permittivity can only occur at the (former) etch vias, which are either visible by the presence of air cavities or hardly visible due to a later filling with the dielectric material of the next interlevel dielectric layer. The integrated-circuit device of the invention completely avoids a penetration of copper from the metal interconnect line sections into the adjacent interlevel or intermetal dielectric layers.

Control of localized air gap formation in an interconnect stack

Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.

Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter

A new anode configuration () is proposed for a lithium microbattery (). The anode () preferably consists of nanotubes or of nanowires () such that the empty space () left between the different components () provides compensation for the inherent swelling upon discharging the microbattery (). With the absence of stresses on the electrolyte (), the lifetime of the battery () may be increased.

Nanostructured electrode for a microbattery

A microcomponent including: an electrochemical storage source; a first substrate including a first contact face; a second substrate including a second contact face; 'at least one internal cavity formed from a first cavity recessed into the first contact face of the first substrate, or from a second cavity recessed into the second contact face of the second substrate, or from the first cavity recessed into the first contact face of the first substrate and the second cavity recessed into the second contact face of the second substrate, wherein the two substrates are integrated together via their respective contact faces and a sealing member, and said internal cavity contains the electrochemical storage source; and electrical connections between the electrochemical storage source and an external environment.

Integrated microcomponent combining energy recovery and storage functions

A micro fuel cell comprises at least a substrate provided with front and rear faces. The front face of the substrate supports a successive stacking of a first electrode, a substantially flat electrolytic membrane and a second electrode. The electrolytic membrane comprises at least one anchoring element salient substantially perpendicularly to a main plane of said membrane. The anchoring element is arranged in a complementary part of an anchoring recess formed in the substrate. The substrate can also comprise a plurality of microchannels, substantially perpendicular to the main plane of the membrane. The anchoring recess can then be formed by one of the microchannels whereas the other microchannels enable supply of the first electrode with reactive fluid. Such a micro fuel cell is able to operate when a pressure difference exists between the two sides of the stacking.

Micro fuel cell with an electrolytic membrane reinforced by an anchoring element and method for production of a micro fuel cell

During the production of a lithium microbattery, the electrolyte containing a lithiated compound is formed by successively depositing an electrolytic thin film, a first protective thin film that is chemically inert in relation to the lithium, and a first masking thin film on a substrate provided with current collectors and a cathode. A photolithography step is carried out on the first masking thin film in order to create a mask for selectively etching the first masking thin layer, and the first protective thin layer and the electrolytic thin film are then selectively etched in such a way as to form the electrolyte in the electrolytic thin film. This technique enables the electrolyte to be formed by photolithography and etching without causing any damage thereto.

Method for producing a lithium microbattery

Post-deposition treatment to enhance properties of Si-O-C low k films

A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.

Method of decreasing the k value in sioc layer deposited by chemical vapor deposition

A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes at least one silicon oxycarbide layer and at least one substantially silicon-free layer comprising carbon and hydrogen. The layers are deposited from a gas mixture including an organosilicon compound and a silicon-free hydrocarbon-based compound. The low dielectric constant film is deposited by a plasma process than includes pulses of RF power.

Method for depositing a low dielectric constant film

A method for forming a trench isolation structure on a substrate. The method includes applying a pad oxide layer () on the substrate (), applying a polysilicon layer () over the pad oxide layer, and applying a CVD anti-reflective coating (ARC) () over the polysilicon layer. A photoresist is formed on the CVD ARC and a trenched is etched at a desired location. One embodiment provides a method for depositing a trench oxide filling layer () on the trenched substrate utilizing the surface sensitivity of dielectric materials such as O/TEOS to achieve a substantially self-planarized dielectric layer. Prior problems with porous trench fill, particular near trench corners, are obviated by use of the polysilicon layer. After deposition, an oxidizing anneal can be performed to grow a thermal oxide () at the trench surfaces and densify the dielectric material. A chemical mechanical polish can be used to remove the excess oxide material, including the porous regions.

Integration scheme using self-planarized dielectric layer for shallow trench isolation (STI)

Post-deposition treatment to enhance properties of Si-O-C low films

Growing community of inventors

Voiron, France

Frederic Gaillard