Applied Materials, Inc.

Tian H Lim

Li-Qun Xia

Ellie Y Yieh

Frederic Gaillard

Himansu Pokharna

Fabrice Geiger

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

Post-deposition treatment to enhance properties of Si-O-C low K films

Post-deposition treatment to enhance properties of Si-O-C low k films

An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

Lid cooling mechanism and method for optimized deposition of low-K dielectric using TR methylsilane-ozone based processes

Post-deposition treatment to enhance properties of Si-O-C low films

A method for providing a dielectric film having enhanced adhesion and stability. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si&mdash;C) bond.

Methods and apparatus to enhance properties of Si-O-C low K films

A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si&mdash;C) bond. During the deposition process the wafer is heated to a temperature less than 250&deg; C. and preferably to a temperature between 100-200&deg; C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.

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Santa Clara, CA, United States of America

Tian H Lim