The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2005

Filed:

Nov. 08, 2002
Applicants:

Himansu Pokharna, San Jose, CA (US);

Li-qun Xia, San Jose, CA (US);

Tian H. Lim, Santa Clara, CA (US);

Inventors:

Himansu Pokharna, San Jose, CA (US);

Li-Qun Xia, San Jose, CA (US);

Tian H. Lim, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C016/00 ; C23C016/40 ;
U.S. Cl.
CPC ...
Abstract

An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.


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