Takefu, Japan

Tetsuya Igarashi



Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 85(Granted Patents)


Location History:

  • Fukui-ken, JP (2000)
  • Takefu, JP (2001 - 2004)

Company Filing History:


Years Active: 2000-2004

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6 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Tetsuya Igarashi in Silicon Crystal Technology**

Introduction

Tetsuya Igarashi, an accomplished inventor based in Takefu, Japan, has made remarkable contributions to the field of silicon technology. With a total of six patents to his name, Igarashi has focused on innovations in producing silicon single crystals and wafers, particularly with advancements in doping techniques.

Latest Patents

Among his latest developments, Igarashi has patented a method for producing silicon single crystals and wafers doped with gallium. This patent describes a silicon single crystal produced using the Czochralski method, with gallium added as a dopant, achieving resistivity levels between 5Ω.cm and 0.1Ω.cm. His innovation also outlines a method where gallium is introduced into a silicon melt in a crucible, allowing for the growth of high-quality silicon single crystal ingots.

Furthermore, Igarashi has developed an apparatus and method for producing silicon semiconductor single crystals that stabilizes and homogenizes the amount of precipitated oxygen along the crystal growth axis. This technology is crucial for enhancing the efficiency and reliability of solar cells while preventing photo-degradation in single crystals, even those with high oxygen concentrations.

Career Highlights

Throughout his career, Tetsuya Igarashi has worked with notable companies in the semiconductor industry, including Shin-Etsu Handotai Co., Ltd. His experience has allowed him to be at the forefront of silicon production technology, influencing the efficiency and quality of semiconductor materials.

Collaborations

Igarashi has collaborated with esteemed colleagues such as Takao Abe and Izumi Fusegawa, contributing to the advancement of silicon crystal technologies. Their combined expertise has facilitated the development of innovative methods that enhance the production process and improve material characteristics.

Conclusion

Tetsuya Igarashi's inventive spirit and technical expertise have led to significant advancements in silicon single crystal technology. With his focus on optimizing production methods and doping techniques, Igarashi continues to play a vital role in the semiconductor industry, paving the way for future innovations in solar energy and beyond.

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