The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2002

Filed:

Jul. 24, 2000
Applicant:
Inventors:

Takao Abe, Annaka, JP;

Ichiro Yonenaga, Sendai, JP;

Tetsuya Igarashi, Takefu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/500 ;
U.S. Cl.
CPC ...
H01L 3/500 ;
Abstract

Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10 mm or more in size.


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