Shin-Etsu Handotai Co., Ltd.

Other

Tetsuya Igarashi

Takao Abe

Izumi Fusegawa

Tomohiko Ohta

Shoji Akiyama

Ryoji Hoshi

Tatsuhiro Sato

Hiroyuki Miyazawa

Hiroyuki Watanabe

Ken Aihara

Yoshinori Hayamizu

Satoshi Soeta

Katsushi Tokunaga

Toshiharu Uesugi

Takahiro Yanagimachi

Yuuichi Miyahara

Tetsuhiro Oda

Teruhiko Hirasawa

Toshio Hisaichi

Weifeng Qu

Ichiro Yonenaga

Masafumi Yamaguchi

Shigeru Saito

Weifung Qu

There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5&OHgr;.cm to 0.1&OHgr;.cm and a method for producing a silicon single crystal to which Ga (gallium) is added as a dopant according to Czochralski method characterized in that Ga is added in a silicon melt in a crucible, a seed crystal is brought into contact with the silicon melt and is pulled with rotating to grow a silicon single crystal ingot. Thereby, a silicon single crystal and silicon single crystal wafer and a method for producing them that can produce a solar cell characterized in that photo-degradation is not caused even in the single crystal having high oxygen concentration and a conversion efficiency of optical energy is very high.

Silicon single crystal and wafer doped with gallium and method for producing them

The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.

Apparatus and method for producing silicon semiconductor single crystal

A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;&middot;cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.

Production method for silicon wafer and silicon wafer

Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5&times;10 mm or more in size.

Silicon germanium crystal

There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (,) made of a translucent quartz glass layer and a synthetic quartz glass layer (,) formed on an inner wall surface of the crucible base body (,), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.

Quartz glass crucible for pulling silicon single crystal and production process for such crucible

In a Czochralski method for producing a silicon single crystal by growing the crystal, the pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined or constant diameter part of the single crystal. The length t of the tail part is defined to be a or more, where a represents a distance from the tip end of the tail part to a position of an extraordinary oxygen precipitation area when the tail part is formed after the predetermined or constant diameter part is grown. Productivity and yield of the silicon single crystal are improved by preventing rapid change in temperature while the single crystal is separated from the melt in the tailing process, to suppress generation of an area where the amount of precipitated oxygen is extraordinarily large and an OSF ring due to rapid increase in temperature when the tail part is formed, in the predetermined or constant diameter part near the tail part.

Method for producing a silicon single crystal and the silicon single

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Takefu, Japan

Tetsuya Igarashi