Te-Yang Lai

This inventor holds 36 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Te-Yang Lai. Retrieved from https://idiyas.com/inventor/te-yang-lai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 (Patent Applications = 16)

% Patents Active = 80.6

Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 8(Granted Patents)

Company Filing History:

32 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

4 out of 481

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2021-2026

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Areas of Expertise:

Semiconductor Device

Gate Dielectric

Negative-Capacitance

Ferroelectric Transistor

Gap Filling

High-k Dielectric

3D Stacking

Nanostructure Transistor

Workfunction Engineering

Doped Dielectric

Manufacturing Method

36 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12740133 - Volumeless threshold voltage tuning for stacked device structures (2026-09-15),

2. 12740083 - Method of gap filling for semiconductor device (2026-09-15),

3. 12720807 - Gate dielectric layers for stacked multi-gate device (2026-08-25),

4. 12701722 - Semiconductor device and method for forming the same (2026-08-04),

5. 12666685 - Triple layer high-k gate dielectric stack for workfunction engineering (2026-06-23),

6. 12598784 - Semiconductor device having doped gate dielectric layer and method for forming the same (2026-04-07),

7. 12588231 - Method of gap filling for semiconductor device (2026-03-24),

8. 12568662 - Semiconductor devices and methods of forming the same (2026-03-03),

9. 12501689 - Nanostructure field-effect transistor device and method of forming (2025-12-16),

10. 12417918 - Semiconductor device having doped gate dielectric layer and method for forming the same (2025-09-16),

11. 12387935 - Dipole-engineered high-k gate dielectric and method forming same (2025-08-12),

12. 12382671 - Semiconductor structure and manufacturing method for the semiconductor structure (2025-08-05),

13. 12322595 - Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture (2025-06-03),

14. 12300738 - Semiconductor device and manufacturing method for the semiconductor device (2025-05-13),

15. 12243932 - Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices (2025-03-04),

Title: Te-Yang Lai: Pioneering Female Inventor from Hsinchu

Introduction: Te-Yang Lai is a trailblazing inventor hailing from Hsinchu, Taiwan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Te-Yang Lai holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing her diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Te-Yang Lai has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout her career, Te-Yang Lai has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Te-Yang Lai's relentless pursuit of innovation and her passion for pushing the boundaries of technology make her a true pioneer in the world of inventions, inspiring future generations to dream big and think outside the box.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

16 patents pending: