Tokyo, Japan

Tatsunori Murotani


Average Co-Inventor Count = 1.1

ph-index = 8

Forward Citations = 174(Granted Patents)


Company Filing History:


Years Active: 1981-1997

Loading Chart...
12 patents (USPTO):Explore Patents

Title: Innovations by Tatsunori Murotani

Introduction

Tatsunori Murotani is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on enhancing the efficiency and performance of dynamic random access memory devices.

Latest Patents

One of Murotani's latest patents is a low power consumption semiconductor dynamic random access memory device. This invention addresses the necessity of data refresh in semiconductor dynamic random access memory devices. It innovatively recycles electric charges from bit line pairs for a row of memory cell arrays to power supply lines for bit line drivers associated with the next row of memory cell arrays. This process significantly reduces power consumption during data refresh. Another notable patent is for a dynamic semiconductor memory with a refresh function. This invention divides the memory cell array into several portions, each with a refresh period tailored to the memory cell with the minimum data retention time. This approach greatly reduces electrical power consumption compared to conventional memory cell arrays.

Career Highlights

Throughout his career, Murotani has worked with notable companies such as NEC Corporation and Nippon Electric Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Murotani has collaborated with several professionals in his field, including Isao Naritake and Tadahiko Sugibayashi. These collaborations have likely enriched his work and led to further advancements in semiconductor technology.

Conclusion

Tatsunori Murotani's contributions to semiconductor technology through his innovative patents demonstrate his commitment to enhancing memory device efficiency. His work continues to influence the field and pave the way for future advancements.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…