The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 1988
Filed:
Nov. 10, 1986
Applicant:
Inventor:
Tatsunori Murotani, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 41 ; 357 54 ; 357 59 ;
Abstract
A semiconductor memory device which has low noise structure and is operable with high stability. The memory device employs a plurality of single transistor memory cells each composed of a capacitor and a transistor coupled between one electrode of the capacitor and a bit line, the other electrode of the capacitor being supplied with a predetermined potential. The other electrode is made of a refractory metal, and a relatively low sheet resistance is provided to the other electrode of the capacitor so that the potential fluctuation at the other electrode of the capacitor is suppressed.