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For the Inventor, By the Inventor

Yokohama, Japan

Takuya Futatsuyama

This inventor holds 118 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Memory (CPC class G11C16-0483). Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation, Kioxia Corporation. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takuya Futatsuyama. Retrieved from https://idiyas.com/inventor/takuya-futatsuyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 118 

% Patents Active = 84.7

Average Co-Inventor Count = 1.9

ph-index = 15

Forward Citations = 760(Granted Patents)

Forward Citations (Not Self Cited) = 645(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Yokohamashi Kanagawa, JP (2016)
  • Kanagawa, JP (2015 - 2021)
  • Yokohama Kanagawa, JP (2015 - 2023)
  • Yokohama, JP (2002 - 2024)

Company Filing History:

goldMedal78 out of 53,276 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal26 out of 2,955 
 
Toshiba Memory Corporation
 patents
bronzeMedal14 out of 3,204 
 
Kioxia Corporation
 patents

Years Active: 2002-2026

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Areas of Expertise:
Nonvolatile Memory
Semiconductor Device
Memory Device
Memory System
Storage Device
Control Method
Memory Technology
Data Retention
Flash Memory
Integrated Circuit
Memory Architecture
Data Storage
118 patents (USPTO):Explore Patents
1. 12665032 - Memory device (2026-06-23),
2. 12321598 - Nonvolatile semiconductor memory device (2025-06-03),
3. 12254929 - Semiconductor memory device (2025-03-18),
4. 11875856 - Semiconductor memory device (2024-01-16),
5. 11705204 - Semiconductor memory device (2023-07-18),
6. 11670382 - Memory device (2023-06-06),
7. 11626142 - Semiconductor memory device (2023-04-11),
8. 11615850 - Semiconductor memory device (2023-03-28),
9. 11592987 - Nonvolatile semiconductor memory device (2023-02-28),
10. 11443787 - Semiconductor memory device (2022-09-13),
11. 11270773 - Semiconductor memory device (2022-03-08),
12. 11238938 - Semiconductor memory device (2022-02-01),
13. 11211396 - Semiconductor memory device (2021-12-28),
14. 11176971 - Semiconductor memory device (2021-11-16),
15. 11164888 - Semiconductor memory device (2021-11-02),

Sure, here is the article about inventor Takuya Futatsuyama:

Title: Unveiling the Ingenious Mind of Takuya Futatsuyama: Pioneering Innovations in Semiconductor Memory Devices

Introduction:

Takuya Futatsuyama is a renowned inventor based in Yokohama, Japan, with an impressive portfolio of 115 patents to his name. His groundbreaking work in the field of semiconductor memory devices has revolutionized the technology landscape, paving the way for advanced data storage solutions.

Latest Patents:

Futatsuyama's latest patents showcase his innovative approach to semiconductor memory devices. One of his recent advancements includes a semiconductor memory device designed to execute various operations for efficient data writing. By applying specific voltages to different components, this device optimizes the writing process, enhancing performance and reliability.

Another notable patent by Futatsuyama introduces a semiconductor memory device with advanced erasing capabilities. This device features a control unit that performs erasing operations on memory cells by applying carefully calibrated voltages to achieve optimal results.

Career Highlights:

Throughout his career, Takuya Futatsuyama has gained valuable experience working with industry giants such as Toshiba Memory Corporation and Kabushiki Kaisha Toshiba. His contributions to these esteemed companies have played a significant role in driving innovation and pushing the boundaries of technological advancement in the semiconductor industry.

Collaborations:

In his quest for innovation, Futatsuyama has collaborated with esteemed professionals in the field, including Masanobu Shirakawa and Kenichi Abe. Together, they have leveraged their collective expertise to push the boundaries of semiconductor memory technology and bring cutting-edge solutions to the market.

Conclusion:

Takuya Futatsuyama's relentless pursuit of innovation and his pioneering spirit have solidified his position as a trailblazer in the field of semiconductor memory devices. His patents stand as a testament to his dedication to excellence and his commitment to pushing the boundaries of what is possible in the realm of data storage technology. Futatsuyama's contributions will continue to inspire future generations of inventors and shape the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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