Hachioji, Japan

Takeshi Aoki


Average Co-Inventor Count = 5.2

ph-index = 4

Forward Citations = 50(Granted Patents)


Location History:

  • Hachioji, JP (2000 - 2004)
  • Ebina, JP (2004)

Company Filing History:


Years Active: 2000-2004

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Takeshi Aoki

Introduction

Takeshi Aoki is a prominent inventor based in Hachioji, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced methods for film formation and semiconductor device production.

Latest Patents

Among his latest patents is a method for forming a film by plasma. This innovative process aims to produce a fluorine-containing carbon film, which serves as an interlayer insulator. The invention details how a conductive film, such as a titanium nitride (TiN) film, is formed on the carbon film. After a resist film pattern is created, the TiN film is etched using BCl gas. The process involves irradiating the wafer's surface with oxygen plasma, which chemically etches the carbon film and the resist film. The TiN film acts as a mask, allowing for the formation of predetermined holes. Additionally, the TiN film serves as an adhesion layer for interconnection layers, enhancing the overall functionality of the semiconductor device.

Career Highlights

Takeshi Aoki is currently employed at Tokyo Electron Limited, a leading company in the semiconductor industry. His expertise and innovative approaches have positioned him as a key figure in the development of advanced semiconductor technologies.

Collaborations

Some of his notable coworkers include Takashi Akahori and Risa Nakase. Their collaborative efforts contribute to the ongoing advancements in semiconductor research and development.

Conclusion

Takeshi Aoki's contributions to semiconductor technology through his patents and work at Tokyo Electron Limited highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of semiconductor devices.

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