The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Oct. 15, 1998
Takashi Akahori, Hachioji, JP;
Shuichi Ishizuka, Tsukui-Gun, JP;
Shunichi Endo, Sagamihara, JP;
Takeshi Aoki, Hachioji, JP;
Tadashi Hirata, Sagamihara, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film , is formed on a CF film . After a pattern of a resist film is formed thereon, the TiN film is etched with, e.g., BCl gas. Thereafter, when the surface of the wafer is irradiated with O plasma, the CF film is chemically etched, and the resist film is also etched. However, since the TiN film functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film , the TiN film functions as an adhesion layer for adhering the interconnection layer to the CF film and serves as a part of the interconnection layer. As the mask, an insulator film of SiO or the like may be substituted for the film.