The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Jul. 06, 1998
Applicant:
Inventors:
Takashi Akahori, Hachioji, JP;
Yoko Naito, Sagamihara, JP;
Shunichi Endo, Sagamihara, JP;
Masahide Saito, Setagaya-Ku, JP;
Takeshi Aoki, Hachioji, JP;
Tadashi Hirata, Sagamihara, JP;
Assignee:
Tokyo Electron Limited, Tokyo-To, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
For example, in a plasma processing system, C,F,gas and C,H,gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350° C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film,having an F content of, for example, 22% on silicon substrate,This CF film,has a relative dielectric constant of 2.4.