Nagoya, Japan

Takashi Shimazu

This inventor holds 87 USPTO granted patents and 7 published patent applications and 17 EPO patents, primarily in Semiconductor Devices (CPC class H01L29-7869). Top assignees: Semiconductor Energy Laboratory Co., Ltd., Kabushiki Kaisha Toyota Chuo Kenkyusho, Toyota Jidosha Kabushiki Kaisha. Active years: 1995-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Shimazu. Retrieved from https://idiyas.com/inventor/takashi-shimazu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 87 

% Patents Active = 69.0

 

Average Co-Inventor Count = 3.7

ph-index = 16

Forward Citations = 898(Granted Patents)

Forward Citations (Not Self Cited) = 763(Dec 10, 2025)


Inventors with similar research interests:

🔬 See more inventors

Location History:

  • Aichi, JP (1995)
  • Aichi-ken, JP (1996 - 2002)
  • Machida, JP (2011 - 2018)
  • Nagakute, JP (2017 - 2019)
  • Nagoya, JP (2004 - 2023)
  • Tokyo, JP (2012 - 2024)

Company Filing History:


Years Active: 1995-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Sputtering Target
Thin Film
Semiconductor Device
Image Processing
Head-Mounted Display
Heat Pump
Cooling Generation
Hydrogen Storage
Gas Storage
Thermal Energy Storage
Heat Exchanger
Chemical Accumulator
87 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Takashi Shimazu in Semiconductor Technology**

Introduction

Takashi Shimazu, based in Nagoya, Japan, is a prominent inventor and innovator in the field of semiconductor technology. With an impressive portfolio of 85 patents, his work has significantly advanced the development of semiconductor devices, paving the way for new technological applications and improvements.

Latest Patents

One of Takashi Shimazu’s latest inventions involves a unique semiconductor device that includes a gate electrode, a gate insulating film, and an oxide semiconductor film. This film is designed to be in contact with the gate insulating film and overlaps with the gate electrode. The device features a source electrode and a drain electrode that are electrically connected to the oxide semiconductor film. Notably, the oxide semiconductor film has a first region that is in contact with the gate insulating film, with a thickness of less than or equal to 5 nm, and displays a silicon concentration lower than or equal to 1.0 at.%. Additionally, the region beyond the first region has an even lower silicon concentration. Crucially, at least the first region consists of a crystal portion, enhancing the device's performance and reliability.

Career Highlights

Throughout his career, Takashi Shimazu has collaborated with leading companies in the semiconductor industry, including Semiconductor Energy Laboratory Co., Ltd. and Toyota Chuo Kenkyusho. His work at these organizations has established him as a key contributor to advancements in semiconductor technology, emphasizing the integration of innovative materials and designs.

Collaborations

Takashi has also worked alongside notable colleagues, including Shunpei Yamazaki and Tatsuya Honda. Their joint efforts have further enhanced the research and development of semiconductor devices, demonstrating the power of collaboration in driving innovation.

Conclusion

In conclusion, Takashi Shimazu's contributions to semiconductor technology through his numerous patents reflect his dedication to innovation and excellence. His work continues to influence the industry, shaping the future of semiconductor devices and their applications. As technology evolves, the impact of his inventions will undoubtedly be felt across various sectors, enhancing the capabilities of modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…