Semiconductor Energy Laboratory Co., Ltd.

Kabushiki Kaisha Toyota Chuo Kenkyusho

Toyota Jidosha Kabushiki Kaisha

Sony Interactive Entertainment Inc.

Aisin Takaoka Co., Ltd.

Denso Corporation

Omi Mining Co., Ltd.

Kabushiki Kaisha Toyota Jidoshokki

Takashi Shimazu

Shunpei Yamazaki

Masashi Tsubuku

Tatsuya Honda

Yusuke Nonaka

Yasuki Hirota

Takafumi Yamauchi

Junichiro Sakata

Masahiro Takahashi

Hiroyuki Mitsui

Takuya Hirohashi

Motoki Nakashima

Hiroshi Aoki

Kenichi Okazaki

Tetsunori Maruyama

Yuki Imoto

Mitsuo Mashiyama

Hideo Sobukawa

Masahiro Watanabe

Toshinari Sasaki

Hiroki Ohara

Satoshi Aoyama

Hiromichi Godo

Satoshi Iguchi

Katsushi Otsuka

Hidetoshi Shimizu

Shigeru Ogino

Masayuki Sakakura

Hidekazu Miyairi

Akiharu Miyanaga

Takeyoshi Watabe

Shuji Tomura

Takaji Umeno

Yoshiaki Fukushima

Yuichiro Nakamura

Masakazu Aoki

Kenji Kimura

Yoshinori Ohashi

Naoki Ito

Shinichi Hirata

Makoto Koizumi

Makoto Furuno

Takashi Murata

Masayoshi Katagiri

Takatoshi Masui

Katsuya Komaki

Hiromasa Naganuma

Satoshi Yamazaki

Hiroshi Mieda

Koichi Numata

Junya Suzuki

Ryuichi Iwata

Hitomi Sato

Satoshi Shiokawa

Shigeru Sakamoto

Haruo Katagiri

Eriko Nishida

Ryusuke Tsuji

Tomohisa Wakasugi

Shuzou Sanda

Yoshihiro Hotta

Yoshiki Seno

Masashi Ishihara

Yasuhiro Ohmiya

Akio Inatomi

Toru Shinoda

Yasuo Takada

Manabu Orihashi

Kazuhisa Yano

Keisuke Nagasaka

Yasuhiro Izawa

Masaki Morita

Takafumi Yamasaki

Kazuhisa Kunitake

Shuichi Kubo

Satoshi Hariu

Takeshi Nishikawa

Yoriko Hasegawa

Tsutomu Shinagawa

Tadahiro Nakagawa

Masashi Hara

Miyo Mochizuki

Hiroyuki Itahara

Tsutomu Sawada

Takatsune Fujimura

Yoshihiro Kishida

Kazutoshi Kuwayama

There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Sputtering target, method for manufacturing sputtering target, and method for forming thin film

A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

Semiconductor device

Provided is an information processing device including a light source control section that changes intensity of light of a light source which irradiates eyes of a user, a reception section that receives, from an event driven vision sensor including a sensor which generates an event signal when detecting a change in intensity of a light to be incident thereon, the event signal indicating a position and a time of the change in intensity of the light reflected by the eyes of the user, and a visual line detection section that identifies the light source corresponding to the event signal on the basis of a relative positional relation among the eyes of the user, the light source, and the vision sensor, and of the event signal generated at the same time that control is carried out by the light source control section, to detect a visual line of the user.

Information processing device, visual line detection system, visual line detection method, and visual line detection program

Semiconductor device comprising oxide semiconductor film

Disclosed herein is an image processing apparatus including: a captured image acquisition unit configured to acquire data of a captured image; a correction unit configured to refer to a displacement vector map, which is stored in a storage unit and represents, on an image plane, displacement vectors each representative of a displacement amount and a displacement direction of a pixel used when the captured image is to be corrected to a display image or calculate the displacement vectors to correct the captured image; and an image display controlling unit configured to cause the corrected image to be displayed on a display panel.

Image processing apparatus, head-mounted display, and image displaying method

Disclosed herein is an image processing apparatus including: a signal processing unit configured to acquire data of a captured image; a correction unit configured to correct the captured image to an image suitable for display; a synthesis unit configured to synthesize an image for synthesis transmitted from an apparatus, which is not provided integrally with the image processing apparatus, with the captured image; and an image display controlling unit configured to control a display panel to display the synthesized image. The correction unit carries out, from among processes for correcting the captured image to the image suitable for display, part of the correction processes for the captured image before the synthesis by the synthesis unit and carries out remaining correction processes for the image after the synthesis.

A heat exchanger comprising: a heat exchange unit that exchanges heat between a heat transfer medium and a heat exchange object; a phase change unit, which comprises a liquid phase space that accommodates the heat transfer medium in a liquid phase state, and a gas phase space that accommodates the heat transfer medium in a gas phase state, the heat transfer medium being capable of moving into and out of the gas phase space; and a first channel along which the heat transfer medium is moved from the phase change unit to the heat exchange unit, wherein the heat exchanger is configured such that a saturated vapor pressure at a temperature of the heat transfer medium in the liquid phase flowing into the phase change unit differs from a pressure of the heat transfer medium in the gas phase in the gas phase space.

Heat exchanger and heat storage system

A switching device sequentially switches from having an evaporator-condenser generate an adsorbate and an adsorbent adsorb the adsorbate, to having an evaporator-condenser condense the adsorbate and an adsorbent desorb the adsorbate, such that the evaporator-condenser that generates the adsorbate and the adsorbent that adsorbs the adsorbate face each other, and the evaporator-condenser that condenses the adsorbate and the adsorbent that desorbs the adsorbate face each other. Accordingly, one adsorbent repeatedly desorbs and adsorbs in alternation, and another adsorbent repeatedly adsorbs and desorbs in alternation.

Heat pump

Growing community of inventors

Nagoya, Japan

Takashi Shimazu