Company Filing History:
Years Active: 1994-1996
Title: **Takashi Kurose: Pioneer in Semiconductor Doping Technology**
Introduction
Takashi Kurose, a distinguished inventor based in Moriguchi, Japan, has made significant strides in the field of semiconductor technology with his innovative approaches to doping methods. With two patents to his name, Kurose continues to contribute to advancements in this critical area of electronics.
Latest Patents
Kurose's latest patents revolve around the method of doping semiconductor devices, specifically focusing on Group III-V compound semiconductors. His first patent details a fabrication method that involves forming an undoped film of SiOx and a diffusion-preventing film (like SiN) on a crystal of Group III-V compound semiconductor. The innovative process allows silicon from the SiOx film to diffuse into the semiconductor, resulting in a doped layer essential for various electronic applications. The second patent reinforces this concept, outlining a systematic approach to doping Group III-V compound semiconductors to create components like field-effect transistors, diodes, and quantum devices.
Career Highlights
Takashi Kurose has built his career at Sanyo Electric Co., Ltd., where his research has focused on semiconductor materials and applications. His expertise in semiconductor doping techniques has led to significant innovations that enhance electronic devices’ performance and efficiency.
Collaborations
Throughout his career, Kurose has collaborated with notable colleagues, including Yasoo Harada and Shigeharu Matsushita. These collaborations have helped to further innovate and refine semiconductor technologies, showcasing the strength of teamwork in advancing scientific understanding and application.
Conclusion
In conclusion, Takashi Kurose stands out as a notable inventor in the realm of semiconductor technology, making a meaningful impact through his patents and collaborative efforts. His work at Sanyo Electric Co., Ltd. continues to pave the way for future innovations in the field, emphasizing the importance of doping methods in the development of advanced electronic devices.
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