The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 1994
Filed:
Jun. 10, 1993
Yasoo Harada, Moriguchi, JP;
Shigeharu Matsushita, Moriguchi, JP;
Satoshi Terada, Moriguchi, JP;
Emi Fujii, Moriguchi, JP;
Takashi Kurose, Moriguchi, JP;
Takayoshi Higashino, Moriguchi, JP;
Takashi Yamada, Moriguchi, JP;
Akihito Nagamatsu, Moriguchi, JP;
Daijirou Inoue, Moriguchi, JP;
Kouji Matsumura, Moriguchi, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.