Location History:
- Moriguchi, JP (1994 - 1996)
- Hirakata, JP (1997)
Company Filing History:
Years Active: 1994-1997
Title: Satoshi Terada: Innovating Field Effect Semiconductor Devices
Introduction
Satoshi Terada is a prominent inventor based in Moriguchi, Japan, recognized for his significant contributions to the field of semiconductor technology. With a total of three patents to his name, he has made substantial strides in the development of field effect semiconductor devices. His work has been instrumental in advancing the capabilities of semiconductor applications within the industry.
Latest Patents
One of Terada's latest inventions is a field effect semiconductor device that consists of multiple channel layers designed for both low-noise and high-power operations. The first channel layer is made of an undoped semiconductor, allowing for the effective drift of electrons, while the second channel layer includes a semiconductor of one conductivity type. Additionally, a third channel layer is included, either within or adjacent to the second channel layer, that possesses a higher electron affinity and a smaller forbidden bandgap. This innovative design enhances the operational efficiency of semiconductor devices.
Another notable patent encompasses a method for doping semiconductor devices. This involves a group III-V compound semiconductor that is doped with an impurity, using an undoped film of SiOx and a film that prevents the diffusion of Group V atoms, such as SiN. The process allows for the effective formation of a doped layer by diffusing silicon into the compound semiconductor, marking a significant advancement in semiconductor fabrication methods.
Career Highlights
Satoshi Terada is currently engaged with Sanyo Electric Co., Ltd., where he applies his expertise in semiconductor technology to drive innovation. His role at this esteemed company has enabled him to explore various applications of his inventions, solidifying his reputation as a leader in his field.
Collaborations
Throughout his career, Terada has collaborated with notable professionals, including Shigeharu Matsushita and Emi Fujii. These partnerships have fostered an environment of creativity and shared knowledge, contributing to the success of his projects and the technological advancements achieved within the semiconductor sector.
Conclusion
Satoshi Terada's contributions to the development of field effect semiconductor devices illustrate his innovative spirit and dedication to the field of semiconductor technology. With his ongoing work at Sanyo Electric Co., Ltd., and his valuable patents, Terada continues to influence the industry and inspire future advancements in semiconductor devices.
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