Sanyo Electric Co., Ltd.

Satoshi Terada

Shigeharu Matsushita

Yasoo Harada

Emi Fujii

Takashi Yamada

Takayoshi Higashino

Daijirou Inoue

Akihito Nagamatsu

Takashi Kurose

Kouji Matsumura

Minoru Sawada

A field effect semiconductor device comprises a first channel layer composed of an undoped semiconductor in which electrons mainly drift in low-noise operation and a second channel layer composed of a semiconductor of one conductivity type in which electrons mainly drift in high-power operation, a third channel layer being provided in the second channel layer or on the second channel layer on the opposite side of the first channel layer. The third channel layer is constituted by at least one semiconductor layer of the one conductivity type or undoped having a greater electron affinity than that of the second channel layer and having a smaller forbidden bandgap than that of the second channel layer. In another field effect semiconductor device, an undoped impurity diffusion preventing layer having an electron affinity approximately equal to that of the second channel layer is provided between the first channel layer and the second channel layer.

Field effect semiconductor device

A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

Method of doping, semiconductor device, and method of fabricating

A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.

Method of doping a group III-V compound semiconductor

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Moriguchi, Japan

Satoshi Terada