The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 1996
Filed:
Mar. 30, 1994
Applicant:
Inventors:
Yasoo Harada, Moriguchi, JP;
Shigeharu Matsushita, Moriguchi, JP;
Satoshi Terada, Moriguchi, JP;
Emi Fujii, Moriguchi, JP;
Takashi Kurose, Moriguchi, JP;
Takayoshi Higashino, Moriguchi, JP;
Takashi Yamada, Moriguchi, JP;
Akihito Nagamatsu, Moriguchi, JP;
Daijirou Inoue, Moriguchi, JP;
Kouji Matsumura, Moriguchi, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguichi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257631 ; 257 14 ; 257 24 ; 257183 ; 257192 ; 257289 ; 257537 ; 257641 ; 257649 ;
Abstract
A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.