Daijirou Inoue

Title: Daijirou Inoue: Innovator in Semiconductor Technology

Introduction

Daijirou Inoue is a prominent inventor based in Moriguchi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on developing advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Inoue's latest patents include a field-effect semiconductor device featuring a heterojunction. This device comprises an undoped Al.sub.0.22 Ga.sub.0.78 As layer, an undoped In.sub.0.2 Ga.sub.0.8 As electron-drifting layer, and an undoped GaAs electron-supplying layer, all formed sequentially on a GaAs substrate. Additionally, an impurity-doped layer, delta-doped with Si donor, is integrated into the GaAs electron-supplying layer. The design also includes an n-Al.sub.0.22 Ga.sub.0.78 As layer and n.sup.+ -GaAs cap layers, with source and drain electrodes positioned on the n.sup.+ -GaAs cap layers and a gate electrode on the n-Al.sub.0.22 Ga.sub.0.78 As layer. Another notable patent involves a method of doping a semiconductor device, which includes a group III-V compound semiconductor doped with an impurity. This method utilizes an undoped film of SiOx and a film to prevent the diffusion of Group V atoms, such as an SiN film, to create a doped layer.

Career Highlights

Inoue is currently employed at Sanyo Electric Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and effective for various applications.

Collaborations

Inoue has collaborated with notable colleagues, including Yasoo Harada and Shigeharu Matsushita. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Daijirou Inoue's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in this critical field.